FQPF17N08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF17N08

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 11.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm

Encapsulados: TO-220F

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FQPF17N08 datasheet

 ..1. Size:600K  fairchild semi
 fqpf17n08.pdf pdf_icon

FQPF17N08

January 2001 TM QFET QFET QFET QFET FQPF17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has bee

 0.1. Size:555K  fairchild semi
 fqpf17n08l.pdf pdf_icon

FQPF17N08

December 2000 TM QFET QFET QFET QFET FQPF17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. Low Crss ( typical 29 pF) This advanced technology

 7.1. Size:723K  fairchild semi
 fqpf17n40t.pdf pdf_icon

FQPF17N08

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 7.2. Size:728K  fairchild semi
 fqpf17n40.pdf pdf_icon

FQPF17N08

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

MOSTRAR MÁS

Otros transistores... FQPF13N10L, FQPF13N50, FQPF13N50CSDTU, FQPF13N50CT, FQPF13N50T, FQPF14N15, FQPF14N30, FQPF16N25, AO4407, FQPF17N08L, FQPF17N40T, FQPF17P06, FQPF17P10, FQPF18N20V2, FQPF18N50V2, FQPF19N10L, FQPF19N20CYDTU