All MOSFET. FQPF17N08 Datasheet

 

FQPF17N08 Datasheet and Replacement


   Type Designator: FQPF17N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 11.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO-220F
 

 FQPF17N08 substitution

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FQPF17N08 Datasheet (PDF)

 ..1. Size:600K  fairchild semi
 fqpf17n08.pdf pdf_icon

FQPF17N08

January 2001TMQFETQFETQFETQFETFQPF17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has bee

 0.1. Size:555K  fairchild semi
 fqpf17n08l.pdf pdf_icon

FQPF17N08

December 2000TMQFETQFETQFETQFETFQPF17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced technology

 7.1. Size:723K  fairchild semi
 fqpf17n40t.pdf pdf_icon

FQPF17N08

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 7.2. Size:728K  fairchild semi
 fqpf17n40.pdf pdf_icon

FQPF17N08

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

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Datasheet: FQPF13N10L , FQPF13N50 , FQPF13N50CSDTU , FQPF13N50CT , FQPF13N50T , FQPF14N15 , FQPF14N30 , FQPF16N25 , AO4407 , FQPF17N08L , FQPF17N40T , FQPF17P06 , FQPF17P10 , FQPF18N20V2 , FQPF18N50V2 , FQPF19N10L , FQPF19N20CYDTU .

History: IPA50R800CE

Keywords - FQPF17N08 MOSFET datasheet

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