FQPF2NA90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF2NA90
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 52 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.8 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de FQPF2NA90 MOSFET
FQPF2NA90 Datasheet (PDF)
fqpf2na90.pdf

September 2000TMQFETQFETQFETQFETFQPF2NA90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has
fqpf2n30.pdf

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 3.7 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been
fqpf2n90.pdf

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has be
fqp2n60c fqpf2n60c.pdf

April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo
Otros transistores... FQPF27N25T , FQPF28N15 , FQPF28N15T , FQPF2N30 , FQPF2N40 , FQPF2N50 , FQPF2N60 , FQPF2N90 , IRF730 , FQPF2P25 , FQPF2P40 , FQPF30N06 , FQPF32N12V2 , FQPF34N20 , FQPF34N20L , FQPF3N30 , FQPF3N40 .
History: HYG060N08NS1P | SI4N60-TN3-T | STP28N65M2 | STC2200 | NCE3080L
History: HYG060N08NS1P | SI4N60-TN3-T | STP28N65M2 | STC2200 | NCE3080L



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