FQPF2NA90 PDF and Equivalents Search

 

FQPF2NA90 Specs and Replacement


   Type Designator: FQPF2NA90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm
   Package: TO-220F
 

 FQPF2NA90 substitution

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FQPF2NA90 datasheet

 ..1. Size:677K  fairchild semi
fqpf2na90.pdf pdf_icon

FQPF2NA90

September 2000 TM QFET QFET QFET QFET FQPF2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has... See More ⇒

 8.1. Size:732K  fairchild semi
fqpf2n30.pdf pdf_icon

FQPF2NA90

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been ... See More ⇒

 8.2. Size:726K  fairchild semi
fqpf2n90.pdf pdf_icon

FQPF2NA90

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has be... See More ⇒

 8.3. Size:1366K  fairchild semi
fqp2n60c fqpf2n60c.pdf pdf_icon

FQPF2NA90

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo... See More ⇒

Detailed specifications: FQPF27N25T , FQPF28N15 , FQPF28N15T , FQPF2N30 , FQPF2N40 , FQPF2N50 , FQPF2N60 , FQPF2N90 , IRFB31N20D , FQPF2P25 , FQPF2P40 , FQPF30N06 , FQPF32N12V2 , FQPF34N20 , FQPF34N20L , FQPF3N30 , FQPF3N40 .

Keywords - FQPF2NA90 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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