FQPF32N12V2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQPF32N12V2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 41 nC
   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET FQPF32N12V2

FQPF32N12V2 Datasheet (PDF)

..1. Size:856K fairchild semi
fqp32n12v2 fqpf32n12v2.pdf

QFETFQP32N12V2/FQPF32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailor

7.1. Size:1208K fairchild semi
fqp32n20c fqpf32n20c.pdf

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

7.2. Size:1184K onsemi
fqp32n20c fqpf32n20c.pdf

9.1. Size:716K fairchild semi
fqpf34n20.pdf

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has be

9.2. Size:647K fairchild semi
fqpf34n20l.pdf

June 2000TMQFETQFETQFETQFETFQPF34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology h

9.3. Size:710K fairchild semi
fqpf3n40.pdf

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 4.2 pF)This advanced technology has bee

9.4. Size:810K fairchild semi
fqp3n80c fqpf3n80c.pdf

TMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especially tailored t

9.5. Size:677K fairchild semi
fqpf3n90.pdf

September 2000TMQFETQFETQFETQFETFQPF3N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 8.0 pF)This advanced technology has

9.6. Size:638K fairchild semi
fqpf3n80.pdf

September 2000TMQFETFQPF3N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology has been especially tail

9.7. Size:643K fairchild semi
fqpf30n06.pdf

May 2001TMQFETFQPF30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially tailored to

9.8. Size:717K fairchild semi
fqpf3n30.pdf

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.95A, 300V, RDS(on) = 2.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.5 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has bee

9.9. Size:591K fairchild semi
fqpf33n10.pdf

April 2000TMQFETQFETQFETQFETFQPF33N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 62 pF)This advanced technology has been

9.10. Size:1269K fairchild semi
fqp3n50c fqpf3n50c.pdf

QFETFQP3N50C/FQPF3N50C 500V N-Channel MOSFETFeatures Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC )DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology has been especially tailored to

9.11. Size:808K fairchild semi
fqpf3n80cydtu.pdf

9.12. Size:653K fairchild semi
fqpf30n06l.pdf

May 2001TMQFETFQPF30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 22.5A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially ta

9.13. Size:555K fairchild semi
fqpf3n60.pdf

April 2000TMQFETQFETQFETQFETFQPF3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been e

9.14. Size:1267K fairchild semi
fqp3n50c fqpf3n50c.pdf

9.15. Size:657K fairchild semi
fqpf33n10l.pdf

September 2000TMQFETQFETQFETQFETFQPF33N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technolog

9.16. Size:620K fairchild semi
fqpf3p50.pdf

August 2000TMQFETQFETQFETQFETFQPF3P50500V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -1.9A, -500V, RDS(on) = 4.9 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has be

9.17. Size:724K fairchild semi
fqpf3n25.pdf

November 2013FQPF3N25N-Channel QFET MOSFET250 V, 2.3 A, 2.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 1.15 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC)technology has been especially tailored

9.18. Size:531K fairchild semi
fqpf3p20.pdf

QFET P-CHANNEL FQPF3P20FEATURESBVDSS = -200V Advanced New DesignRDS(ON) = 2.7 Avalanche Rugged TechnologyID = -2.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220F Unrivalled Gate Charge: 6.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 2.06 (Typ.) 1231. Gate 2. Drain 3.

9.19. Size:883K onsemi
fqp3n80c fqpf3n80c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.20. Size:1214K onsemi
fqpf33n10.pdf