All MOSFET. FQPF32N12V2 Datasheet

 

FQPF32N12V2 Datasheet and Replacement


   Type Designator: FQPF32N12V2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220F
 

 FQPF32N12V2 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQPF32N12V2 Datasheet (PDF)

 ..1. Size:856K  fairchild semi
fqp32n12v2 fqpf32n12v2.pdf pdf_icon

FQPF32N12V2

QFETFQP32N12V2/FQPF32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailor

 7.1. Size:1208K  fairchild semi
fqp32n20c fqpf32n20c.pdf pdf_icon

FQPF32N12V2

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

 7.2. Size:1184K  onsemi
fqp32n20c fqpf32n20c.pdf pdf_icon

FQPF32N12V2

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

 9.1. Size:716K  fairchild semi
fqpf34n20.pdf pdf_icon

FQPF32N12V2

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has be

Datasheet: FQPF2N40 , FQPF2N50 , FQPF2N60 , FQPF2N90 , FQPF2NA90 , FQPF2P25 , FQPF2P40 , FQPF30N06 , RU7088R , FQPF34N20 , FQPF34N20L , FQPF3N30 , FQPF3N40 , FQPF3N50C , FQPF3N60 , FQPF3N80 , FQPF3N80CYDTU .

History: BRF8N80 | AOD474A | FHP10N65A | STF3NK100Z | DM12N65C-2 | BRCS3400MC | SEF401002

Keywords - FQPF32N12V2 MOSFET datasheet

 FQPF32N12V2 cross reference
 FQPF32N12V2 equivalent finder
 FQPF32N12V2 lookup
 FQPF32N12V2 substitution
 FQPF32N12V2 replacement

 

 
Back to Top

 


 
.