FQPF5N50CTTU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF5N50CTTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de FQPF5N50CTTU MOSFET

- Selecciónⓘ de transistores por parámetros

 

FQPF5N50CTTU datasheet

 ..1. Size:879K  fairchild semi
 fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf pdf_icon

FQPF5N50CTTU

 5.1. Size:657K  fairchild semi
 fqpf5n50cf fqpf5n50cftu.pdf pdf_icon

FQPF5N50CTTU

TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- F

 5.2. Size:979K  onsemi
 fqp5n50c fqpf5n50c.pdf pdf_icon

FQPF5N50CTTU

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 6.1. Size:750K  fairchild semi
 fqpf5n50.pdf pdf_icon

FQPF5N50CTTU

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been

MOSTRAR MÁS

Otros transistores... FQPF55N10, FQPF5N15, FQPF5N20, FQPF5N20L, FQPF5N30, FQPF5N50, FQPF5N50CFTU, FQPF5N50CT, IRF3710, FQPF5N50CYDTU, FQPF5N60, FQPF5N60CYDTU, FQPF5N80, FQPF5P10, FQPF6N15, FQPF6N25, FQPF6N40C