FQPF5N50CTTU Specs and Replacement
Type Designator: FQPF5N50CTTU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220F
FQPF5N50CTTU substitution
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FQPF5N50CTTU datasheet
fqp5n50c fqp5n50c fqpf5n50c fqpf5n50c fqpf5n50ct fqpf5n50cttu fqpf5n50cydtu.pdf
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fqpf5n50cf fqpf5n50cftu.pdf
TM FRFET FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini- F... See More ⇒
fqp5n50c fqpf5n50c.pdf
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fqpf5n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been... See More ⇒
Detailed specifications: FQPF55N10 , FQPF5N15 , FQPF5N20 , FQPF5N20L , FQPF5N30 , FQPF5N50 , FQPF5N50CFTU , FQPF5N50CT , IRF3710 , FQPF5N50CYDTU , FQPF5N60 , FQPF5N60CYDTU , FQPF5N80 , FQPF5P10 , FQPF6N15 , FQPF6N25 , FQPF6N40C .
History: H5N5004PL-E0-E
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: H5N5004PL-E0-E
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