FQPF6N90CT Todos los transistores

 

FQPF6N90CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF6N90CT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-220F

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FQPF6N90CT Datasheet (PDF)

 ..1. Size:858K  fairchild semi
fqpf6n90ct.pdf

FQPF6N90CT
FQPF6N90CT

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 5.1. Size:860K  fairchild semi
fqp6n90c fqpf6n90c.pdf

FQPF6N90CT
FQPF6N90CT

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 5.2. Size:1255K  onsemi
fqp6n90c fqpf6n90c.pdf

FQPF6N90CT
FQPF6N90CT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:600K  fairchild semi
fqpf6n90.pdf

FQPF6N90CT
FQPF6N90CT

QFET N-CHANNEL FQPF6N90FEATURESBVDSS = 900V Advanced New DesignRDS(ON) = 1.9 Avalanche Rugged TechnologyID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220F Unrivalled Gate Charge: 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 1.5 (Typ.) 1231. Gate 2. Drain 3. Sou

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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