FQPF6N90CT Todos los transistores

 ..1. Size:858K  fairchild semi
 fqpf6n90ct.pdf

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

 5.1. Size:860K  fairchild semi
 fqp6n90c fqpf6n90c.pdf

TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to

 5.2. Size:1255K  onsemi
 fqp6n90c fqpf6n90c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:600K  fairchild semi
 fqpf6n90.pdf

QFET N-CHANNEL FQPF6N90 FEATURES BVDSS = 900V Advanced New Design RDS(ON) = 1.9 Avalanche Rugged Technology ID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics TO-220F Unrivalled Gate Charge 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 1.5 (Typ.) 1 2 3 1. Gate 2. Drain 3. Sou