All MOSFET. FQPF6N90CT Datasheet

 

FQPF6N90CT Datasheet and Replacement


   Type Designator: FQPF6N90CT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220F
 

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FQPF6N90CT Datasheet (PDF)

 ..1. Size:858K  fairchild semi
 fqpf6n90ct.pdf pdf_icon

FQPF6N90CT

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 5.1. Size:860K  fairchild semi
 fqp6n90c fqpf6n90c.pdf pdf_icon

FQPF6N90CT

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 5.2. Size:1255K  onsemi
 fqp6n90c fqpf6n90c.pdf pdf_icon

FQPF6N90CT

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:600K  fairchild semi
 fqpf6n90.pdf pdf_icon

FQPF6N90CT

QFET N-CHANNEL FQPF6N90FEATURESBVDSS = 900V Advanced New DesignRDS(ON) = 1.9 Avalanche Rugged TechnologyID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching CharacteristicsTO-220F Unrivalled Gate Charge: 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 1.5 (Typ.) 1231. Gate 2. Drain 3. Sou

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Datasheet: FQPF6N40CF , FQPF6N40CT , FQPF6N50 , FQPF6N60 , FQPF6N60C , FQPF6N70 , FQPF6N80 , FQPF6N90 , 5N60 , FQPF6P25 , FQPF7N10 , FQPF7N10L , FQPF7N20 , FQPF7N20L , FQPF7N40 , FQPF7N65CF105 , FQPF7N65CYDTU .

History: AOSP62530 | PJS6416 | UT3404G-AE3-R

Keywords - FQPF6N90CT MOSFET datasheet

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