FQPF7N10 Todos los transistores

 

FQPF7N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF7N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.8 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de FQPF7N10 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQPF7N10 Datasheet (PDF)

 ..1. Size:550K  fairchild semi
 fqpf7n10.pdf pdf_icon

FQPF7N10

December 2000TMQFETQFETQFETQFETFQPF7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is esp

 0.1. Size:554K  fairchild semi
 fqpf7n10l.pdf pdf_icon

FQPF7N10

December 2000TMQFETQFETQFETQFETFQPF7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology

 8.1. Size:683K  fairchild semi
 fqpf7n20.pdf pdf_icon

FQPF7N10

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.8A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has bee

 8.2. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQPF7N10

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

MOSTRAR MÁS

Otros transistores... FQPF6N50 , FQPF6N60 , FQPF6N60C , FQPF6N70 , FQPF6N80 , FQPF6N90 , FQPF6N90CT , FQPF6P25 , SPP20N60C3 , FQPF7N10L , FQPF7N20 , FQPF7N20L , FQPF7N40 , FQPF7N65CF105 , FQPF7N65CYDTU , FQPF7N80 , FQPF7P06 .

History: 2SK3150L | AP10TN040P

 

 
Back to Top

 


 
.