All MOSFET. FQPF7N10 Datasheet

 

FQPF7N10 Datasheet and Replacement


   Type Designator: FQPF7N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO-220F
 

 FQPF7N10 substitution

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FQPF7N10 Datasheet (PDF)

 ..1. Size:550K  fairchild semi
 fqpf7n10.pdf pdf_icon

FQPF7N10

December 2000TMQFETQFETQFETQFETFQPF7N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology is esp

 0.1. Size:554K  fairchild semi
 fqpf7n10l.pdf pdf_icon

FQPF7N10

December 2000TMQFETQFETQFETQFETFQPF7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology

 8.1. Size:683K  fairchild semi
 fqpf7n20.pdf pdf_icon

FQPF7N10

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.8A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has bee

 8.2. Size:886K  fairchild semi
 fqp7n65c fqpf7n65c.pdf pdf_icon

FQPF7N10

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

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Datasheet: FQPF6N50 , FQPF6N60 , FQPF6N60C , FQPF6N70 , FQPF6N80 , FQPF6N90 , FQPF6N90CT , FQPF6P25 , SPP20N60C3 , FQPF7N10L , FQPF7N20 , FQPF7N20L , FQPF7N40 , FQPF7N65CF105 , FQPF7N65CYDTU , FQPF7N80 , FQPF7P06 .

History: AP10TN040P | SMIRF5N65T2TL | NCEAP40T11G | 2SK3535-01 | 2SK2760-01 | 2SK3725-01 | BSS315P

Keywords - FQPF7N10 MOSFET datasheet

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