FQPF7N65CF105 Todos los transistores

 

FQPF7N65CF105 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQPF7N65CF105
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-220F
 

 Búsqueda de reemplazo de FQPF7N65CF105 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQPF7N65CF105 Datasheet (PDF)

 5.1. Size:886K  fairchild semi
fqp7n65c fqpf7n65c.pdf pdf_icon

FQPF7N65CF105

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 5.2. Size:885K  fairchild semi
fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf pdf_icon

FQPF7N65CF105

QFETFQP7N65C/FQPF7N65C650V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 7.1. Size:604K  fairchild semi
fqpf7n60.pdf pdf_icon

FQPF7N65CF105

April 2000TMQFETQFETQFETQFETFQPF7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been es

Otros transistores... FQPF6N90 , FQPF6N90CT , FQPF6P25 , FQPF7N10 , FQPF7N10L , FQPF7N20 , FQPF7N20L , FQPF7N40 , IRFB3607 , FQPF7N65CYDTU , FQPF7N80 , FQPF7P06 , FQPF8N60CT , FQPF8N60CYDTU , FQPF8N80CYDTU , FQPF8P10 , FQPF90N10V2 .

History: NCEP016N60VD | IMW120R090M1H | AOT280L | 40N15L-TF2-T | AP9410GM | AP9465AGH

 

 
Back to Top

 


 
.