FQPF7N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF7N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO-220F

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FQPF7N80 datasheet

 ..1. Size:787K  fairchild semi
 fqpf7n80.pdf pdf_icon

FQPF7N80

April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been e

 0.1. Size:848K  fairchild semi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQPF7N80

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 0.2. Size:849K  onsemi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQPF7N80

TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 0.3. Size:218K  inchange semiconductor
 fqpf7n80c.pdf pdf_icon

FQPF7N80

isc N-Channel MOSFET Transistor FQPF7N80C FEATURES Drain-source on-resistance RDS(on) 1.9 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

MOSTRAR MÁS

Otros transistores... FQPF6P25, FQPF7N10, FQPF7N10L, FQPF7N20, FQPF7N20L, FQPF7N40, FQPF7N65CF105, FQPF7N65CYDTU, AON7410, FQPF7P06, FQPF8N60CT, FQPF8N60CYDTU, FQPF8N80CYDTU, FQPF8P10, FQPF90N10V2, FQPF9N08, FQPF9N08L