FQPF8N80CYDTU Todos los transistores

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January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has

 ..2. Size:1252K  fairchild semi
 fqpf8n80cydtu.pdf

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has

 ..3. Size:1146K  onsemi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf

December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Description Features This N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 4.0 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) tec

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QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

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QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

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February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored t

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QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

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 fqp8n60c fqpf8n60c.pdf

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

 8.7. Size:1285K  onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur