All MOSFET. FQPF8N80CYDTU Datasheet

 

FQPF8N80CYDTU MOSFET. Datasheet pdf. Equivalent

Type Designator: FQPF8N80CYDTU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 59 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 135 pF

Maximum Drain-Source On-State Resistance (Rds): 1.55 Ohm

Package: TO-220F

FQPF8N80CYDTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQPF8N80CYDTU Datasheet (PDF)

1.1. fqpf8n80cydtu.pdf Size:1252K _fairchild_semi

FQPF8N80CYDTU
FQPF8N80CYDTU

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 35 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has

1.2. fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf Size:1280K _fairchild_semi

FQPF8N80CYDTU
FQPF8N80CYDTU

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especial

 4.1. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi

FQPF8N80CYDTU
FQPF8N80CYDTU

® QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

4.2. fqp8n90c fqpf8n90c.pdf Size:865K _fairchild_semi

FQPF8N80CYDTU
FQPF8N80CYDTU

QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

 4.3. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi

FQPF8N80CYDTU
FQPF8N80CYDTU

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

4.4. fqpf8n60cf.pdf Size:750K _fairchild_semi

FQPF8N80CYDTU
FQPF8N80CYDTU

February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast swi

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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