FQPF9N50 Todos los transistores

 

FQPF9N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF9N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 28 nC

Tiempo de elevación (tr): 95 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 0.73 Ohm

Empaquetado / Estuche: TO-220F

Búsqueda de reemplazo de MOSFET FQPF9N50

 

 

FQPF9N50 Datasheet (PDF)

1.1. fqpf9n50c.pdf Size:770K _fairchild_semi

FQPF9N50
FQPF9N50

November 2013 FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

1.2. fqpf9n50ct fqpf9n50cydtu.pdf Size:844K _fairchild_semi

FQPF9N50
FQPF9N50

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 1.3. fqpf9n50cf.pdf Size:765K _fairchild_semi

FQPF9N50
FQPF9N50

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to mini- Fast

1.4. fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf Size:712K _fairchild_semi

FQPF9N50
FQPF9N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been

 1.5. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQPF9N50
FQPF9N50

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast swit

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

Back to Top

 


FQPF9N50
  FQPF9N50
  FQPF9N50
  FQPF9N50
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

Back to Top