FQPF9N50 Todos los transistores

 

FQPF9N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF9N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 28 nC

Tiempo de elevación (tr): 95 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 0.73 Ohm

Empaquetado / Estuche: TO-220F

Búsqueda de reemplazo de MOSFET FQPF9N50

 

FQPF9N50 Datasheet (PDF)

1.1. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQPF9N50
FQPF9N50

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast swit

1.2. fqpf9n50ct fqpf9n50cydtu.pdf Size:844K _fairchild_semi

FQPF9N50
FQPF9N50

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 1.3. fqpf9n50c.pdf Size:770K _fairchild_semi

FQPF9N50
FQPF9N50

November 2013 FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

1.4. fqpf9n50cf.pdf Size:765K _fairchild_semi

FQPF9N50
FQPF9N50

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to mini- Fast

 1.5. fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf Size:712K _fairchild_semi

FQPF9N50
FQPF9N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
Back to Top

 


FQPF9N50
  FQPF9N50
  FQPF9N50
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUXFS4409 | AUIRLZ24NS | AUIRLZ24NL | AUIRLU024Z | AUIRLSL4030 | AUIRLS3114Z | AUIRLR3705ZTR | AUIRLR3410TRL | AUIRLR2905ZTR | AUIRLR2905TR | AUIRLR2703TR | AUIRLR024NTR | AUIRLL024Z | AUIRL7766M2TR | AUIRL7736M2TR |

 

 

 
Back to Top