FQPF9N50 Datasheet and Replacement
Type Designator: FQPF9N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-220F
FQPF9N50 substitution
FQPF9N50 Datasheet (PDF)
fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been
fqpf9n50ct fqpf9n50cydtu.pdf

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
fqpf9n50cf.pdf

December 2005TMFRFETFQPF9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC)DMOS technology. Low Crss (typical 24pF)This advanced technology has been especially tailored to
fqp9n50c fqpf9n50c.pdf

TMQFETFQP9N50C/FQPF9N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to
Datasheet: FQPF8P10 , FQPF90N10V2 , FQPF9N08 , FQPF9N08L , FQPF9N15 , FQPF9N25CT , FQPF9N25CYDTU , FQPF9N30 , P60NF06 , FQPF9N50CT , FQPF9N50CYDTU , FQPF9N50T , FQPF9N50YDTU , FQPF9N90CT , FQPF9P25YDTU , FQS4410TF , FQT13N06LTF .
History: BUK664R4-55C | VBZE30N02
Keywords - FQPF9N50 MOSFET datasheet
FQPF9N50 cross reference
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History: BUK664R4-55C | VBZE30N02



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