FQPF9N50 Specs and Replacement

Type Designator: FQPF9N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm

Package: TO-220F

FQPF9N50 substitution

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FQPF9N50 datasheet

 ..1. Size:712K  fairchild semi
fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf pdf_icon

FQPF9N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been ... See More ⇒

 0.1. Size:844K  fairchild semi
fqpf9n50ct fqpf9n50cydtu.pdf pdf_icon

FQPF9N50

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to... See More ⇒

 0.2. Size:765K  fairchild semi
fqpf9n50cf.pdf pdf_icon

FQPF9N50

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to ... See More ⇒

 0.3. Size:845K  fairchild semi
fqp9n50c fqpf9n50c.pdf pdf_icon

FQPF9N50

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to... See More ⇒

Detailed specifications: FQPF8P10, FQPF90N10V2, FQPF9N08, FQPF9N08L, FQPF9N15, FQPF9N25CT, FQPF9N25CYDTU, FQPF9N30, AO4407, FQPF9N50CT, FQPF9N50CYDTU, FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF

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