FQPF9N50 Specs and Replacement
Type Designator: FQPF9N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-220F
FQPF9N50 substitution
- MOSFET ⓘ Cross-Reference Search
FQPF9N50 datasheet
fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 500V, RDS(on) = 0.73 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been ... See More ⇒
fqpf9n50ct fqpf9n50cydtu.pdf
TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to... See More ⇒
fqpf9n50cf.pdf
December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to ... See More ⇒
fqp9n50c fqpf9n50c.pdf
TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to... See More ⇒
Detailed specifications: FQPF8P10, FQPF90N10V2, FQPF9N08, FQPF9N08L, FQPF9N15, FQPF9N25CT, FQPF9N25CYDTU, FQPF9N30, AO4407, FQPF9N50CT, FQPF9N50CYDTU, FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF
Keywords - FQPF9N50 MOSFET specs
FQPF9N50 cross reference
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