FQT1N60CTFWS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQT1N60CTFWS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm

Encapsulados: SOT-223

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FQT1N60CTFWS datasheet

 4.1. Size:816K  fairchild semi
 fqt1n60c fqt1n60ctf ws.pdf pdf_icon

FQT1N60CTFWS

November 2007 QFET FQT1N60C N-Channel MOSFET 600V, 0.2A, 11.5 Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF) This advanced technology has been especia

 6.1. Size:1221K  onsemi
 fqt1n60c.pdf pdf_icon

FQT1N60CTFWS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:807K  fairchild semi
 fqt1n80.pdf pdf_icon

FQT1N60CTFWS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

 9.2. Size:807K  fairchild semi
 fqt1n80tf ws.pdf pdf_icon

FQT1N60CTFWS

November 2007 QFET FQT1N80 N-Channel MOSFET 800V, 0.2A, 20 Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF) This advanced technology has been especiall

MOSTRAR MÁS

Otros transistores... FQPF9N50CYDTU, FQPF9N50T, FQPF9N50YDTU, FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF, FQT13N06TF, AO3407, FQT1N80TFWS, FQT2P25TF, FQT3P20TF, FQT4N20LTF, FQT4N20TF, FQT4N25TF, FQT5P10TF, FQT7N10LTF