FQT1N60CTFWS MOSFET. Datasheet pdf. Equivalent
Type Designator: FQT1N60CTFWS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.8 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 19 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
Package: SOT-223
FQT1N60CTFWS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQT1N60CTFWS Datasheet (PDF)
fqt1n60c fqt1n60ctf ws.pdf
November 2007 QFETFQT1N60CN-Channel MOSFET600V, 0.2A, 11.5Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF)This advanced technology has been especia
fqt1n60c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqt1n80.pdf
November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall
fqt1n80tf ws.pdf
November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall
fqt1n80tf-ws.pdf
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