All MOSFET. FQT1N60CTFWS Datasheet

 

FQT1N60CTFWS Datasheet and Replacement


   Type Designator: FQT1N60CTFWS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 11.5 Ohm
   Package: SOT-223
 

 FQT1N60CTFWS substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQT1N60CTFWS Datasheet (PDF)

 4.1. Size:816K  fairchild semi
 fqt1n60c fqt1n60ctf ws.pdf pdf_icon

FQT1N60CTFWS

November 2007 QFETFQT1N60CN-Channel MOSFET600V, 0.2A, 11.5Features Description RDS(on) = 9.3 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.8nC) stripe, DMOS technology. Low Crss ( Typ. 3.5pF)This advanced technology has been especia

 6.1. Size:1221K  onsemi
 fqt1n60c.pdf pdf_icon

FQT1N60CTFWS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:807K  fairchild semi
 fqt1n80.pdf pdf_icon

FQT1N60CTFWS

November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall

 9.2. Size:807K  fairchild semi
 fqt1n80tf ws.pdf pdf_icon

FQT1N60CTFWS

November 2007 QFETFQT1N80N-Channel MOSFET800V, 0.2A, 20Features Description RDS(on) = 15.5 (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 5.5nC) stripe, DMOS technology. Low Crss ( Typ. 2.7pF)This advanced technology has been especiall

SHOW MORE

Datasheet: FQPF9N50CYDTU , FQPF9N50T , FQPF9N50YDTU , FQPF9N90CT , FQPF9P25YDTU , FQS4410TF , FQT13N06LTF , FQT13N06TF , 7N60 , FQT1N80TFWS , FQT2P25TF , FQT3P20TF , FQT4N20LTF , FQT4N20TF , FQT4N25TF , FQT5P10TF , FQT7N10LTF .

History: DMN3018SFG | TSM2301CX | 2SK360 | AP1RC03GMT-HF | 2SK1929 | QM3016U | 2SK3481-ZJ

Keywords - FQT1N60CTFWS MOSFET datasheet

 FQT1N60CTFWS cross reference
 FQT1N60CTFWS equivalent finder
 FQT1N60CTFWS lookup
 FQT1N60CTFWS substitution
 FQT1N60CTFWS replacement

 

 
Back to Top

 


 
.