FQT3P20TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQT3P20TF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.67 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Encapsulados: SOT-223
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FQT3P20TF datasheet
fqt3p20tf.pdf
May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis
fqt3p20.pdf
May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis
fqt3p20.pdf
FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V, Description ID = 0.335 A This P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC) produced using ON Semiconductor s proprietary Low Crss ( Typ. 7.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has bee
Otros transistores... FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF, FQT13N06TF, FQT1N60CTFWS, FQT1N80TFWS, FQT2P25TF, IRF520, FQT4N20LTF, FQT4N20TF, FQT4N25TF, FQT5P10TF, FQT7N10LTF, FQT7N10TF, FQU10N20CTU, FQU10N20LTU
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