All MOSFET. FQT3P20TF Datasheet

 

FQT3P20TF Datasheet and Replacement


   Type Designator: FQT3P20TF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.67 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: SOT-223
 

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FQT3P20TF Datasheet (PDF)

 ..1. Size:649K  fairchild semi
 fqt3p20tf.pdf pdf_icon

FQT3P20TF

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis

 7.1. Size:650K  fairchild semi
 fqt3p20.pdf pdf_icon

FQT3P20TF

May 2001TMQFETFQT3P20200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effectFeaturestransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC)minimize on-state resis

 7.2. Size:870K  onsemi
 fqt3p20.pdf pdf_icon

FQT3P20TF

FQT3P20P-Channel QFET MOSFET-200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V,DescriptionID = 0.335 AThis P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC)produced using ON Semiconductors proprietary Low Crss ( Typ. 7.5 pF)planar stripe and DMOS technology. This advanced MOSFET technology has bee

Datasheet: FQPF9N90CT , FQPF9P25YDTU , FQS4410TF , FQT13N06LTF , FQT13N06TF , FQT1N60CTFWS , FQT1N80TFWS , FQT2P25TF , CS150N03A8 , FQT4N20LTF , FQT4N20TF , FQT4N25TF , FQT5P10TF , FQT7N10LTF , FQT7N10TF , FQU10N20CTU , FQU10N20LTU .

History: VBZE30N06 | IRF1405ZPBF

Keywords - FQT3P20TF MOSFET datasheet

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