FQT3P20TF Specs and Replacement
Type Designator: FQT3P20TF
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.67 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: SOT-223
FQT3P20TF substitution
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FQT3P20TF datasheet
fqt3p20tf.pdf
May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis... See More ⇒
fqt3p20.pdf
May 2001 TM QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect Features transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. -0.67A, -200V, RDS(on) = 2.7 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 6.0 nC) minimize on-state resis... See More ⇒
fqt3p20.pdf
FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Features -0.67 A, -200 V, RDS(on) = 2.7 (Max.) @VGS = 10 V, Description ID = 0.335 A This P-Channel enhancement mode power MOSFET is Low Gate Charge ( Typ. 6.0 nC) produced using ON Semiconductor s proprietary Low Crss ( Typ. 7.5 pF) planar stripe and DMOS technology. This advanced MOSFET technology has bee... See More ⇒
Detailed specifications: FQPF9N90CT, FQPF9P25YDTU, FQS4410TF, FQT13N06LTF, FQT13N06TF, FQT1N60CTFWS, FQT1N80TFWS, FQT2P25TF, IRF520, FQT4N20LTF, FQT4N20TF, FQT4N25TF, FQT5P10TF, FQT7N10LTF, FQT7N10TF, FQU10N20CTU, FQU10N20LTU
Keywords - FQT3P20TF MOSFET specs
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