FQU2N50BTU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQU2N50BTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.3 Ohm

Encapsulados: I-PAK

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FQU2N50BTU datasheet

 ..1. Size:598K  fairchild semi
 fqu2n50btu.pdf pdf_icon

FQU2N50BTU

May 2000 TM QFET QFET QFET QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology

 6.1. Size:731K  fairchild semi
 fqu2n50b.pdf pdf_icon

FQU2N50BTU

November 2013 FQU2N50B N-Channel QFET MOSFET 500 V, 1.6 A, 5.3 Description Features This N-Channel enhancement mode power MOSFET is 1.6 A, 500 V, RDS(on) = 5.3 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 0.8 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 6.0 nC) MOSFET technology has been especially tailo

 9.1. Size:731K  fairchild semi
 fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf pdf_icon

FQU2N50BTU

January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially t

 9.2. Size:762K  fairchild semi
 fqd2n60c fqu2n60c fqu2n60ctu.pdf pdf_icon

FQU2N50BTU

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tail

MOSTRAR MÁS

Otros transistores... FQU13N10TU, FQU17P06TU, FQU1N50TU, FQU1N60CTU, FQU1N60TU, FQU1N80TU, FQU20N06TU, FQU2N100TU, RU7088R, FQU2N60CTU, FQU2N60TU, FQU2N80, FQU2N80TU, FQU2N90TU, FQU30N06LTU, FQU3N40TU, FQU3N60