FQU2N50BTU - описание и поиск аналогов

 ..1. Size:598K  fairchild semi
 fqu2n50btu.pdf 

May 2000 TM QFET QFET QFET QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology

 6.1. Size:731K  fairchild semi
 fqu2n50b.pdf 

November 2013 FQU2N50B N-Channel QFET MOSFET 500 V, 1.6 A, 5.3 Description Features This N-Channel enhancement mode power MOSFET is 1.6 A, 500 V, RDS(on) = 5.3 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 0.8 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 6.0 nC) MOSFET technology has been especially tailo

 9.1. Size:731K  fairchild semi
 fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf 

January 2009 QFET FQD2N100/FQU2N100 1000V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially t

 9.2. Size:762K  fairchild semi
 fqd2n60c fqu2n60c fqu2n60ctu.pdf 

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tail

 9.3. Size:1291K  fairchild semi
 fqu2n90.pdf 

January 2014 FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Description Features This N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary ID = 0.85 A planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC) MOSFET technology has been especiall

 9.4. Size:841K  fairchild semi
 fqd2n90tf fqd2n90tm fqd2n90 fqu2n90 fqu2n90tu.pdf 

January 2009 QFET FQD2N90 / FQU2N90 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especi

 9.5. Size:724K  fairchild semi
 fqd2n80tf fqd2n80tm fqd2n80 fqu2n80 fqu2n80 fqu2n80tu.pdf 

January 2008 QFET FQD2N80 / FQU2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially

 9.6. Size:560K  fairchild semi
 fqd2n60tf fqd2n60tm fqu2n60tu.pdf 

April 2000 TM QFET QFET QFET QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology

 9.7. Size:2037K  onsemi
 fqd2n90 fqu2n90.pdf 

FQD2N90 / FQU2N90 N-Channel QFET MOSFET 900 V, 1.7 A, 7.2 Features 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V, ID = 0.85 A Description Low Gate Charge (Typ. 12 nC) This N-Channel enhancement mode power MOSFET is Low Crss (Typ. 5.5 pF) produced using ON Semiconductor s proprietary 100% Avalanche Tested planar stripe and DMOS technology. This advanced

 9.8. Size:618K  onsemi
 fqd2n60c fqu2n60c.pdf 

TM QFET FQD2N60C / FQU2N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.5 nC) planar stripe, DMOS technology. Low Crss ( typical 4.3 pF) This advanced technology has been especially tailored