FQU2N90TU Todos los transistores

 

FQU2N90TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQU2N90TU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.2 Ohm
   Paquete / Cubierta: I-PAK
 

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FQU2N90TU Datasheet (PDF)

 ..1. Size:841K  fairchild semi
 fqd2n90tf fqd2n90tm fqd2n90 fqu2n90 fqu2n90tu.pdf pdf_icon

FQU2N90TU

January 2009QFETFQD2N90 / FQU2N90900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 7.2 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology has been especi

 7.1. Size:1291K  fairchild semi
 fqu2n90.pdf pdf_icon

FQU2N90TU

January 2014FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Description FeaturesThis N-Channel enhancement mode power MOSFET is 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 0.85 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC)MOSFET technology has been especiall

 7.2. Size:2037K  onsemi
 fqd2n90 fqu2n90.pdf pdf_icon

FQU2N90TU

FQD2N90 / FQU2N90N-Channel QFET MOSFET900 V, 1.7 A, 7.2 Features 1.7 A, 900 V, RDS(on) = 7.2 (Max.) @ VGS = 10 V,ID = 0.85 ADescription Low Gate Charge (Typ. 12 nC)This N-Channel enhancement mode power MOSFET is Low Crss (Typ. 5.5 pF)produced using ON Semiconductors proprietary 100% Avalanche Testedplanar stripe and DMOS technology. This advanced

 9.1. Size:731K  fairchild semi
 fqd2n100tf fqd2n100tm fqd2n100 fqu2n100 fqu2n100tu.pdf pdf_icon

FQU2N90TU

January 2009QFETFQD2N100/FQU2N1001000V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.6A, 1000V, RDS(on) = 9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially t

MOSTRAR MÁS

Otros transistores... FQU1N80TU , FQU20N06TU , FQU2N100TU , FQU2N50BTU , FQU2N60CTU , FQU2N60TU , FQU2N80 , FQU2N80TU , 5N50 , FQU30N06LTU , FQU3N40TU , FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU .

 

 
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