FQU3N40TU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQU3N40TU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm

Encapsulados: I-PAK

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FQU3N40TU datasheet

 ..1. Size:705K  fairchild semi
 fqu3n40tu.pdf pdf_icon

FQU3N40TU

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

 9.1. Size:773K  fairchild semi
 fqu3n60ctu.pdf pdf_icon

FQU3N40TU

August 2006 QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description 2.4A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10.5nC) DMOS technology. Low Crss ( typical 5pF) This advanced technology has been especially t

 9.2. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQU3N40TU

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h

 9.3. Size:927K  fairchild semi
 fqd3n50c fqu3n50c.pdf pdf_icon

FQU3N40TU

March 2008 QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF) This advanced technology has been especially tai

MOSTRAR MÁS

Otros transistores... FQU2N100TU, FQU2N50BTU, FQU2N60CTU, FQU2N60TU, FQU2N80, FQU2N80TU, FQU2N90TU, FQU30N06LTU, IRF730, FQU3N60, FQU3N60CTU, FQU3N60TU, FQU3P20TU, FQU3P50TU, FQU4N20TU, FQU4N25TU, FQU5N40TU