FQU3N40TU MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU3N40TU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: I-PAK
FQU3N40TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU3N40TU Datasheet (PDF)
fqu3n40tu.pdf
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