FQU5N50CTU Todos los transistores

 

FQU5N50CTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQU5N50CTU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: I-PAK
     - Selección de transistores por parámetros

 

FQU5N50CTU Datasheet (PDF)

 ..1. Size:664K  fairchild semi
 fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf pdf_icon

FQU5N50CTU

October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially

 7.1. Size:768K  fairchild semi
 fqd5n50tf fqu5n50tu.pdf pdf_icon

FQU5N50CTU

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

 9.1. Size:695K  fairchild semi
 fqd5n20 fqu5n20.pdf pdf_icon

FQU5N50CTU

April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.2. Size:730K  fairchild semi
 fqd5n40tf fqd5n40tm fqu5n40tu.pdf pdf_icon

FQU5N50CTU

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SF1116 | VBQA1405 | HRP72N06K | IRF7316QPBF | ECH8320 | CS3R50FA9 | AP09N70I-H-HF

 

 
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