All MOSFET. FQU5N50CTU Datasheet

 

FQU5N50CTU Datasheet and Replacement


   Type Designator: FQU5N50CTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: I-PAK
 

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FQU5N50CTU Datasheet (PDF)

 ..1. Size:664K  fairchild semi
 fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf pdf_icon

FQU5N50CTU

October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially

 7.1. Size:768K  fairchild semi
 fqd5n50tf fqu5n50tu.pdf pdf_icon

FQU5N50CTU

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

 9.1. Size:695K  fairchild semi
 fqd5n20 fqu5n20.pdf pdf_icon

FQU5N50CTU

April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

 9.2. Size:730K  fairchild semi
 fqd5n40tf fqd5n40tm fqu5n40tu.pdf pdf_icon

FQU5N50CTU

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

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Datasheet: FQU3N60 , FQU3N60CTU , FQU3N60TU , FQU3P20TU , FQU3P50TU , FQU4N20TU , FQU4N25TU , FQU5N40TU , IRF640 , FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , FQU6P25TU , FQU7N10LTU , FQU7P06TU , FQU7P20TU .

History: IPW65R190C6 | DMC1028UFDB | IXTH15N50A | MTN5N50I3 | 2SK1704 | 2SK170

Keywords - FQU5N50CTU MOSFET datasheet

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