FQU7N10LTU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQU7N10LTU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: I-PAK

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FQU7N10LTU datasheet

 ..1. Size:625K  fairchild semi
 fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf pdf_icon

FQU7N10LTU

October 2008 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especia

 9.1. Size:802K  fairchild semi
 fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf pdf_icon

FQU7N10LTU

October 2008 QFET FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especia

 9.2. Size:581K  fairchild semi
 fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf pdf_icon

FQU7N10LTU

April 2000 TM QFET QFET QFET QFET FQD7N30 / FQU7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 300V, RDS(on) = 0.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology h

 9.3. Size:569K  fairchild semi
 fqd7n20l fqu7n20l.pdf pdf_icon

FQU7N10LTU

December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced

MOSTRAR MÁS

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