All MOSFET. FQU7N10LTU Datasheet

 

FQU7N10LTU Datasheet and Replacement


   Type Designator: FQU7N10LTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: I-PAK
 

 FQU7N10LTU substitution

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FQU7N10LTU Datasheet (PDF)

 ..1. Size:625K  fairchild semi
 fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf pdf_icon

FQU7N10LTU

October 2008QFETFQD7N10L / FQU7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology is especia

 9.1. Size:802K  fairchild semi
 fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf pdf_icon

FQU7N10LTU

October 2008QFETFQD7N20 / FQU7N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.0 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology has been especia

 9.2. Size:581K  fairchild semi
 fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf pdf_icon

FQU7N10LTU

April 2000TMQFETQFETQFETQFETFQD7N30 / FQU7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology h

 9.3. Size:569K  fairchild semi
 fqd7n20l fqu7n20l.pdf pdf_icon

FQU7N10LTU

December 2000TMQFETQFETQFETQFETFQD7N20L / FQU7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced

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Datasheet: FQU4N25TU , FQU5N40TU , FQU5N50CTU , FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , FQU6P25TU , IRF630 , FQU7P06TU , FQU7P20TU , FQU8N25TU , FQU8P10TU , FQU9N25TU , IRF6216PBF , IRF6216PBF-1 , IRF6217PBF .

History: SQJA02EP

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