FQU7N10LTU Specs and Replacement

Type Designator: FQU7N10LTU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: I-PAK

FQU7N10LTU substitution

- MOSFET ⓘ Cross-Reference Search

 

FQU7N10LTU datasheet

 ..1. Size:625K  fairchild semi
 fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf pdf_icon

FQU7N10LTU

October 2008 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especia... See More ⇒

 9.1. Size:802K  fairchild semi
 fqd7n20tf fqd7n20tm fqd7n20 fqu7n20.pdf pdf_icon

FQU7N10LTU

October 2008 QFET FQD7N20 / FQU7N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.3A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been especia... See More ⇒

 9.2. Size:581K  fairchild semi
 fqd7n30tf fqd7n30tm fqd7n30 fqu7n30.pdf pdf_icon

FQU7N10LTU

April 2000 TM QFET QFET QFET QFET FQD7N30 / FQU7N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.5A, 300V, RDS(on) = 0.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology h... See More ⇒

 9.3. Size:569K  fairchild semi
 fqd7n20l fqu7n20l.pdf pdf_icon

FQU7N10LTU

December 2000 TM QFET QFET QFET QFET FQD7N20L / FQU7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced... See More ⇒

SHOW MORE

Detailed specifications: FQU4N25TU, FQU5N40TU, FQU5N50CTU, FQU5N50TU, FQU5N60CTU, FQU5P20TU, FQU6N40CTU, FQU6P25TU, IRF640N, FQU7P06TU, FQU7P20TU, FQU8N25TU, FQU8P10TU, FQU9N25TU, IRF6216PBF, IRF6216PBF-1, IRF6217PBF

Keywords - FQU7N10LTU MOSFET specs

 FQU7N10LTU cross reference

 FQU7N10LTU equivalent finder

 FQU7N10LTU pdf lookup

 FQU7N10LTU substitution

 FQU7N10LTU replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility