FQU9N25TU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQU9N25TU Datasheet (PDF)

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May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology

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FQD9N25 / FQU9N25N-Channel QFET MOSFET250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V,ID = 3.7 ADescription Low Gate Charge (Typ. 15.5 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Crss (Typ. 15 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .