All MOSFET. FQU9N25TU Datasheet

 

FQU9N25TU Datasheet and Replacement


   Type Designator: FQU9N25TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: I-PAK
 

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FQU9N25TU Datasheet (PDF)

 ..1. Size:562K  fairchild semi
 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf pdf_icon

FQU9N25TU

May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology

 7.1. Size:905K  onsemi
 fqd9n25 fqu9n25.pdf pdf_icon

FQU9N25TU

FQD9N25 / FQU9N25N-Channel QFET MOSFET250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V,ID = 3.7 ADescription Low Gate Charge (Typ. 15.5 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Crss (Typ. 15 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

Datasheet: FQU5P20TU , FQU6N40CTU , FQU6P25TU , FQU7N10LTU , FQU7P06TU , FQU7P20TU , FQU8N25TU , FQU8P10TU , 10N60 , IRF6216PBF , IRF6216PBF-1 , IRF6217PBF , IRF6217PBF-1 , IRF6218L , IRF6218PBF , IRF6218SPBF , IRF624PBF .

History: BRCS080N04SDP | AUIRLU3114Z | BRCS080N02ZB

Keywords - FQU9N25TU MOSFET datasheet

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