FQU9N25TU Specs and Replacement
Type Designator: FQU9N25TU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: I-PAK
FQU9N25TU substitution
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FQU9N25TU datasheet
fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf
May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology ... See More ⇒
fqd9n25 fqu9n25.pdf
FQD9N25 / FQU9N25 N-Channel QFET MOSFET 250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V, ID = 3.7 A Description Low Gate Charge (Typ. 15.5 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Crss (Typ. 15 pF) planar stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒
Detailed specifications: FQU5P20TU, FQU6N40CTU, FQU6P25TU, FQU7N10LTU, FQU7P06TU, FQU7P20TU, FQU8N25TU, FQU8P10TU, 10N60, IRF6216PBF, IRF6216PBF-1, IRF6217PBF, IRF6217PBF-1, IRF6218L, IRF6218PBF, IRF6218SPBF, IRF624PBF
Keywords - FQU9N25TU MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
