All MOSFET. FQU9N25TU Datasheet

 

FQU9N25TU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQU9N25TU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.5 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: I-PAK

 FQU9N25TU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU9N25TU Datasheet (PDF)

 ..1. Size:562K  fairchild semi
 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf

FQU9N25TU FQU9N25TU

May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology

 7.1. Size:905K  onsemi
 fqd9n25 fqu9n25.pdf

FQU9N25TU FQU9N25TU

FQD9N25 / FQU9N25N-Channel QFET MOSFET250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V,ID = 3.7 ADescription Low Gate Charge (Typ. 15.5 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Crss (Typ. 15 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HF20N60

 

 
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