IRF6218PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF6218PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 370 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: TO-220AB
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IRF6218PBF Datasheet (PDF)
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6218spbf.pdf
PD - 96181IRF6218SPbFSMPS MOSFETIRF6218LPbFHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)D2Pak TO-262l Fully Cha
irf6218l.pdf
PD - 95863AIRF6218SSMPS MOSFETIRF6218LHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)TO-262D2Pakl Fully Charact
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *D
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m@ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CEP83A3G
History: CEP83A3G
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918