IRF6218PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF6218PBF
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 370 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для IRF6218PBF
IRF6218PBF Datasheet (PDF)
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6218spbf.pdf
PD - 96181IRF6218SPbFSMPS MOSFETIRF6218LPbFHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)D2Pak TO-262l Fully Cha
irf6218l.pdf
PD - 95863AIRF6218SSMPS MOSFETIRF6218LHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)TO-262D2Pakl Fully Charact
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *D
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m@ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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