IRFZ44 Datasheet. Equivalente

 ..1. Size:859K  international rectifier
 irfz44.pdf

PD - 94943 IRFZ44PbF Lead-Free 01/14/04 Document Number 91291 www.vishay.com 1 IRFZ44PbF Document Number 91291 www.vishay.com 2 IRFZ44PbF Document Number 91291 www.vishay.com 3 IRFZ44PbF Document Number 91291 www.vishay.com 4 IRFZ44PbF Document Number 91291 www.vishay.com 5 IRFZ44PbF Document Number 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline

 ..2. Size:1540K  vishay
 irfz44 sihfz44.pdf

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 ..3. Size:1542K  vishay
 irfz44pbf sihfz44.pdf

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 0.1. Size:382K  international rectifier
 irfz44zlpbf irfz44zpbf irfz44zspbf.pdf

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

 0.2. Size:325K  international rectifier
 irfz44s irfz44l.pdf

PD - 9.893A IRFZ44S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175 C Operating Temperature RDS(on) = 0.028 Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

 0.3. Size:327K  international rectifier
 auirfz44zstrl.pdf

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Tjmax G Lead-Free, RoHS Compliant ID 51A S Automotive Qualified * D Description D Specifically

 0.4. Size:145K  international rectifier
 irfz44vs irfz44vl.pdf

PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 16.5m Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing te

 0.5. Size:382K  international rectifier
 irfz44zpbf irfz44zspbf irfz44zlpbf.pdf

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

 0.6. Size:226K  international rectifier
 irfz44vpbf.pdf

PD - 94826A IRFZ44VPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced pro

 0.7. Size:229K  international rectifier
 irfz44v.pdf

PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

 0.8. Size:150K  international rectifier
 irfz44npbf.pdf

PD - 94787 IRFZ44NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 17.5m Fully Avalanche Rated G Lead-Free ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 0.9. Size:100K  international rectifier
 irfz44n.pdf

PD - 94053 IRFZ44N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 17.5m G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

 0.10. Size:334K  international rectifier
 irfz44nlpbf irfz44nspbf.pdf

IRFZ44NSPbF l IRFZ44NLPbF l l l D DSS l l l DS(on) Description G D

 0.11. Size:221K  international rectifier
 irfz44rpbf.pdf

PD - 94823 IRFZ44RPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.028 G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from Internation

 0.12. Size:96K  international rectifier
 irfz44e.pdf

PD - 91671B IRFZ44E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.023 G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

 0.13. Size:372K  international rectifier
 irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf

PD - 95947A IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 60V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m Lead-Free G Description ID = 57A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel

 0.14. Size:153K  international rectifier
 irfz44r.pdf

PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.028 G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize a

 0.15. Size:301K  international rectifier
 irfz44vzl irfz44vzpbf irfz44vzspbf.pdf

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 0.16. Size:234K  international rectifier
 irfz44espbf irfz44elpbf.pdf

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 0.17. Size:150K  international rectifier
 irfz44epbf.pdf

PD - 94822 IRFZ44EPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.023 Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

 0.18. Size:334K  international rectifier
 irfz44nspbf irfz44nlpbf.pdf

IRFZ44NSPbF l IRFZ44NLPbF l l l D DSS l l l DS(on) Description G D

 0.19. Size:274K  international rectifier
 auirfz44vzstrl.pdf

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6m l 175 C Operating Temperature l Fast Switching G max. 12m l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

 0.20. Size:163K  international rectifier
 irfz44es irfz44el.pdf

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175 C Operating Temperature RDS(on) = 0.023 G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

 0.21. Size:234K  international rectifier
 irfz44espbf.pdf

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

 0.22. Size:151K  international rectifier
 irfz44ns irfz44nl.pdf

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175 Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e

 0.23. Size:273K  international rectifier
 auirfz44nl auirfz44ns.pdf

PD-96391A AUTOMOTIVE GRADE AUIRFZ44NS AUIRFZ44NL HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 17.5m 175 C Operating Temperature G Fast Switching S ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description

 0.24. Size:320K  international rectifier
 auirfz44n.pdf

AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175 C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Desc

 0.25. Size:580K  international rectifier
 auirfz44v.pdf

PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features D V(BR)DSS l Advanced Planar Technology 60V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 16.5m l 175 C Operating Temperature G l Fast Switching ID 55A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S D

 0.26. Size:57K  international rectifier
 irfz44ns 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat

 0.27. Size:301K  international rectifier
 irfz44vz irfz44vzs irfz44vzl.pdf

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

 0.28. Size:52K  philips
 irfz44n 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-s

 0.29. Size:57K  philips
 irfz44ns 1.pdf

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat

 0.30. Size:503K  samsung
 irfz44a.pdf

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

 0.31. Size:815K  vishay
 irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast S

 0.32. Size:790K  vishay
 irfz44s irfz44l sihfz44s sihfz44l.pdf

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast S

 0.33. Size:1287K  vishay
 irfz44r sihfz44r.pdf

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the

 0.34. Size:1289K  vishay
 irfz44r irfz44rpbf sihfz44r.pdf

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the

 0.35. Size:654K  infineon
 auirfz44vzs.pdf

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175 C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

 0.36. Size:713K  infineon
 auirfz44z auirfz44zs.pdf

AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed

 0.37. Size:252K  lrc
 lirfz44n.pdf

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

 0.38. Size:1138K  cn evvo
 irfz44n.pdf

 0.39. Size:1160K  cn vbsemi
 irfz44rp.pdf

IRFZ44RP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 0.40. Size:1792K  cn vbsemi
 irfz44es.pdf

IRFZ44ES www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 0.41. Size:910K  cn vbsemi
 irfz44vp.pdf

IRFZ44VP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 0.42. Size:824K  cn vbsemi
 irfz44npbf.pdf

IRFZ44NPBF www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

 0.43. Size:1459K  cn vbsemi
 irfz44ns.pdf

IRFZ44NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

 0.44. Size:654K  cn minos
 irfz44n.pdf

60V N-Channel Power MOSFET DESCRIPTION The IRFZ44N uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 60V,I = 60A DS D R

 0.45. Size:1016K  cn minos
 irfz44ns.pdf

60V N-Channel Power MOSFET DESCRIPTION The IRFZ44NS uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS V = 60V,I = 60A DS D R

 0.46. Size:570K  cn haohai electr
 hirfz44n hirfz44f.pdf

 0.47. Size:245K  inchange semiconductor
 irfz44vz.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44VZ IIRFZ44VZ FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 0.48. Size:205K  inchange semiconductor
 irfz44es.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44ES FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

 0.49. Size:246K  inchange semiconductor
 irfz44z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44Z IIRFZ44Z FEATURES Static drain-source on-resistance RDS(on) 13.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 0.50. Size:245K  inchange semiconductor
 irfz44v.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44V IIRFZ44V FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 0.51. Size:100K  inchange semiconductor
 irfz44n.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.032 (Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

 0.52. Size:246K  inchange semiconductor
 irfz44e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44E IIRFZ44E FEATURES Static drain-source on-resistance RDS(on) 23m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

 0.53. Size:258K  inchange semiconductor
 irfz44zs.pdf

Isc N-Channel MOSFET Transistor IRFZ44ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 0.54. Size:145K  inchange semiconductor
 irfz44cn.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.032 (Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

 0.55. Size:257K  inchange semiconductor
 irfz44vzs.pdf

Isc N-Channel MOSFET Transistor IRFZ44VZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 0.56. Size:257K  inchange semiconductor
 irfz44ns.pdf

isc N-Channel MOSFET Transistor IRFZ44NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S