IRFZ44 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94943 IRFZ44PbF Lead-Free 01/14/04 Document Number 91291 www.vishay.com 1 IRFZ44PbF Document Number 91291 www.vishay.com 2 IRFZ44PbF Document Number 91291 www.vishay.com 3 IRFZ44PbF Document Number 91291 www.vishay.com 4 IRFZ44PbF Document Number 91291 www.vishay.com 5 IRFZ44PbF Document Number 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

PD - 9.893A IRFZ44S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175 C Operating Temperature RDS(on) = 0.028 Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Tjmax G Lead-Free, RoHS Compliant ID 51A S Automotive Qualified * D Description D Specifically

PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 16.5m Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing te

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

PD - 94826A IRFZ44VPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced pro

PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac

PD - 94787 IRFZ44NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 17.5m Fully Avalanche Rated G Lead-Free ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

PD - 94053 IRFZ44N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 17.5m G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

IRFZ44NSPbF l IRFZ44NLPbF l l l D DSS l l l DS(on) Description G D

PD - 94823 IRFZ44RPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.028 G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from Internation

PD - 91671B IRFZ44E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.023 G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi

PD - 95947A IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 60V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m Lead-Free G Description ID = 57A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel

PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.028 G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize a

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

PD - 94822 IRFZ44EPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.023 Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ44NSPbF l IRFZ44NLPbF l l l D DSS l l l DS(on) Description G D

PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6m l 175 C Operating Temperature l Fast Switching G max. 12m l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175 C Operating Temperature RDS(on) = 0.023 G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175 Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e

PD-96391A AUTOMOTIVE GRADE AUIRFZ44NS AUIRFZ44NL HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 17.5m 175 C Operating Temperature G Fast Switching S ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description

AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175 C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Desc

PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features D V(BR)DSS l Advanced Planar Technology 60V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 16.5m l 175 C Operating Temperature G l Fast Switching ID 55A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S D

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat

PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-s

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast S

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast S

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175 C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed

LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10

IRFZ44RP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

IRFZ44ES www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

IRFZ44VP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

IRFZ44NPBF www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

IRFZ44NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source

60V N-Channel Power MOSFET DESCRIPTION The IRFZ44N uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 60V,I = 60A DS D R

60V N-Channel Power MOSFET DESCRIPTION The IRFZ44NS uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS V = 60V,I = 60A DS D R

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44VZ IIRFZ44VZ FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44ES FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44Z IIRFZ44Z FEATURES Static drain-source on-resistance RDS(on) 13.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44V IIRFZ44V FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.032 (Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44E IIRFZ44E FEATURES Static drain-source on-resistance RDS(on) 23m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

Isc N-Channel MOSFET Transistor IRFZ44ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.032 (Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

Isc N-Channel MOSFET Transistor IRFZ44VZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

isc N-Channel MOSFET Transistor IRFZ44NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S