IRFZ44 datasheet, аналоги, основные параметры
IRFZ44 - это один из самых известных N-канальных MOSFET, который заслужил популярность благодаря способности пропускать очень большие токи при относительно низком напряжении. Его часто используют как радиолюбители, так и в промышленных решениях.
Основные параметры:
- Напряжение: Максимальное напряжение сток-исток - 60 вольт.
- Ток: Очень высокий непрерывный ток стока - до 50 ампер.
- Сопротивление: Очень низкое сопротивление открытого канала - 0.028 Ома.
- Скорость: Быстрое переключение из-за малого заряда затвора.
- Корпус: Стандартный TO220.
Типичные сферы применения:
- Драйверы мощных двигателей постоянного тока (например, в робототехнике, автомобильных проектах).
- Низковольтные импульсные блоки питания и стабилизаторы.
- Выходные каскады мощных УНЧ (усилителей низкой частоты).
Ключевые достоинства:
- Идеальное сочетание для низковольтных схем: очень высокий ток и очень низкое сопротивление, что минимизирует потери и нагрев.
- Высокая скорость переключения позволяет эффективно использовать его в импульсных режимах.
- Доступность и низкая стоимость благодаря массовому производству.
Практические замечания:
- Напряжение 60В ограничивает его применение только низковольтными цепями (обычно до 48В).
- Несмотря на низкое сопротивление, при токах в десятки ампер выделяется значительная тепловая мощность. Качественный радиатор обязателен.
- Для полного раскрытия его быстродействия нужен драйвер затвора с достаточной мощностью.
Наименование производителя: IRFZ44 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 110 ns
Cossⓘ - Выходная емкость: 920 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
Тип корпуса: TO220
📄📄 Копировать
Аналог (замена) для IRFZ44
- подборⓘ MOSFET транзистора по параметрам
IRFZ44 даташит
..1. Size:859K international rectifier
irfz44.pdf 
PD - 94943 IRFZ44PbF Lead-Free 01/14/04 Document Number 91291 www.vishay.com 1 IRFZ44PbF Document Number 91291 www.vishay.com 2 IRFZ44PbF Document Number 91291 www.vishay.com 3 IRFZ44PbF Document Number 91291 www.vishay.com 4 IRFZ44PbF Document Number 91291 www.vishay.com 5 IRFZ44PbF Document Number 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline
..2. Size:1540K vishay
irfz44 sihfz44.pdf 
IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
..3. Size:1542K vishay
irfz44pbf sihfz44.pdf 
IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) ( )VGS = 10 V 0.028 RoHS* Fast Switching Qg (Max.) (nC) 67 COMPLIANT Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
0.1. Size:382K international rectifier
irfz44zlpbf irfz44zpbf irfz44zspbf.pdf 
PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu
0.2. Size:325K international rectifier
irfz44s irfz44l.pdf 
PD - 9.893A IRFZ44S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175 C Operating Temperature RDS(on) = 0.028 Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
0.3. Size:327K international rectifier
auirfz44zstrl.pdf 
PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Tjmax G Lead-Free, RoHS Compliant ID 51A S Automotive Qualified * D Description D Specifically
0.4. Size:145K international rectifier
irfz44vs irfz44vl.pdf 
PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 16.5m Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing te
0.5. Size:382K international rectifier
irfz44zpbf irfz44zspbf irfz44zlpbf.pdf 
PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu
0.6. Size:226K international rectifier
irfz44vpbf.pdf 
PD - 94826A IRFZ44VPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced pro
0.7. Size:229K international rectifier
irfz44v.pdf 
PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to ac
0.8. Size:150K international rectifier
irfz44npbf.pdf 
PD - 94787 IRFZ44NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 17.5m Fully Avalanche Rated G Lead-Free ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
0.9. Size:100K international rectifier
irfz44n.pdf 
PD - 94053 IRFZ44N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 17.5m G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan
0.11. Size:221K international rectifier
irfz44rpbf.pdf 
PD - 94823 IRFZ44RPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.028 G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from Internation
0.12. Size:96K international rectifier
irfz44e.pdf 
PD - 91671B IRFZ44E HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.023 G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi
0.13. Size:372K international rectifier
irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf 
PD - 95947A IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 60V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m Lead-Free G Description ID = 57A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremel
0.14. Size:153K international rectifier
irfz44r.pdf 
PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.028 G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize a
0.15. Size:301K international rectifier
irfz44vzl irfz44vzpbf irfz44vzspbf.pdf 
PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE
0.16. Size:234K international rectifier
irfz44espbf irfz44elpbf.pdf 
PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
0.17. Size:150K international rectifier
irfz44epbf.pdf 
PD - 94822 IRFZ44EPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.023 Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
0.19. Size:274K international rectifier
auirfz44vzstrl.pdf 
PD - 96354 AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features l Advanced Process Technology D V(BR)DSS 60V l Ultra Low On-Resistance RDS(on) typ. 9.6m l 175 C Operating Temperature l Fast Switching G max. 12m l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID 57A l Automotive Qualified * Description D Specifically designed for Automo
0.20. Size:163K international rectifier
irfz44es irfz44el.pdf 
PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175 C Operating Temperature RDS(on) = 0.023 G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
0.21. Size:234K international rectifier
irfz44espbf.pdf 
PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175 C Operating Temperature RDS(on) = 0.023 l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec
0.22. Size:151K international rectifier
irfz44ns irfz44nl.pdf 
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175 Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e
0.23. Size:273K international rectifier
auirfz44nl auirfz44ns.pdf 
PD-96391A AUTOMOTIVE GRADE AUIRFZ44NS AUIRFZ44NL HEXFET Power MOSFET Features D Advanced Planar Technology V(BR)DSS 55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 17.5m 175 C Operating Temperature G Fast Switching S ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description
0.24. Size:320K international rectifier
auirfz44n.pdf 
AUTOMOTIVE GRADE AUIRFZ44N Features HEXFET Power MOSFET Advanced Planar Technology VDSS Low On-Resistance 55V Dynamic dv/dt Rating RDS(on) max. 175 C Operating Temperature 17.5m Fast Switching ID 49A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Desc
0.25. Size:580K international rectifier
auirfz44v.pdf 
PD - 96415 AUTOMOTIVE GRADE AUIRFZ44V HEXFET Power MOSFET Features D V(BR)DSS l Advanced Planar Technology 60V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 16.5m l 175 C Operating Temperature G l Fast Switching ID 55A l Fully Avalanche Rated S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S D
0.26. Size:57K international rectifier
irfz44ns 1.pdf 
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat
0.27. Size:301K international rectifier
irfz44vz irfz44vzs irfz44vzl.pdf 
PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12m G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET Power MOSFE
0.28. Size:52K philips
irfz44n 1.pdf 
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 49 A features very low on-s
0.29. Size:57K philips
irfz44ns 1.pdf 
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device feat
0.30. Size:503K samsung
irfz44a.pdf 
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin
0.31. Size:815K vishay
irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf 
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast S
0.32. Size:790K vishay
irfz44s irfz44l sihfz44s sihfz44l.pdf 
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 Advanced Process Technology RDS(on) ( )VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating Temperature Qgs (nC) 18 Fast S
0.33. Size:1287K vishay
irfz44r sihfz44r.pdf 
IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the
0.34. Size:1289K vishay
irfz44r irfz44rpbf sihfz44r.pdf 
IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the
0.35. Size:654K infineon
auirfz44vzs.pdf 
AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175 C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed
0.36. Size:713K infineon
auirfz44z auirfz44zs.pdf 
AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed
0.37. Size:252K lrc
lirfz44n.pdf 
LESHAN RADIO COMPANY, LTD. 55V N-Channel Mode MOSFET VDS=55V LIRFZ44N RDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated TO-220 D G S Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 10
0.39. Size:1160K cn vbsemi
irfz44rp.pdf 
IRFZ44RP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
0.40. Size:1792K cn vbsemi
irfz44es.pdf 
IRFZ44ES www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire
0.41. Size:910K cn vbsemi
irfz44vp.pdf 
IRFZ44VP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit
0.42. Size:824K cn vbsemi
irfz44npbf.pdf 
IRFZ44NPBF www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 D TO-220AB G S D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim
0.43. Size:1459K cn vbsemi
irfz44ns.pdf 
IRFZ44NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source
0.44. Size:654K cn minos
irfz44n.pdf 
60V N-Channel Power MOSFET DESCRIPTION The IRFZ44N uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 60V,I = 60A DS D R
0.45. Size:1016K cn minos
irfz44ns.pdf 
60V N-Channel Power MOSFET DESCRIPTION The IRFZ44NS uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply KEY CHARACTERISTICS V = 60V,I = 60A DS D R
0.47. Size:245K inchange semiconductor
irfz44vz.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44VZ IIRFZ44VZ FEATURES Static drain-source on-resistance RDS(on) 12m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
0.48. Size:205K inchange semiconductor
irfz44es.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44ES FEATURES With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =2
0.49. Size:246K inchange semiconductor
irfz44z.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44Z IIRFZ44Z FEATURES Static drain-source on-resistance RDS(on) 13.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
0.50. Size:245K inchange semiconductor
irfz44v.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44V IIRFZ44V FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
0.51. Size:100K inchange semiconductor
irfz44n.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.032 (Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor
0.52. Size:246K inchange semiconductor
irfz44e.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44E IIRFZ44E FEATURES Static drain-source on-resistance RDS(on) 23m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R
0.53. Size:258K inchange semiconductor
irfz44zs.pdf 
Isc N-Channel MOSFET Transistor IRFZ44ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
0.54. Size:145K inchange semiconductor
irfz44cn.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- VDSS= 55V(Min) Static Drain-Source On-Resistance RDS(on) = 0.032 (Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor
0.55. Size:257K inchange semiconductor
irfz44vzs.pdf 
Isc N-Channel MOSFET Transistor IRFZ44VZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
0.56. Size:257K inchange semiconductor
irfz44ns.pdf 
isc N-Channel MOSFET Transistor IRFZ44NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Другие IGBT... IRFZ34E, IRFZ34N, IRFZ34NL, IRFZ34NS, IRFZ35, IRFZ40, IRFZ40FI, IRFZ42, MMIS60R580P, IRFZ44A, IRFZ44E, IRFZ44EL, IRFZ44ES, IRFZ44N, IRFZ44NL, IRFZ44NS, IRFZ45
