IRF634NSPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF634NSPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 84 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.435 Ohm

Encapsulados: TO-263

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IRF634NSPBF datasheet

 ..1. Size:125K  vishay
 irf634nlpbf irf634nspbf.pdf pdf_icon

IRF634NSPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC

 6.1. Size:158K  vishay
 irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf pdf_icon

IRF634NSPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC

 7.1. Size:244K  international rectifier
 irf634n-s-lpbf.pdf pdf_icon

IRF634NSPBF

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect

 7.2. Size:301K  international rectifier
 irf634n.pdf pdf_icon

IRF634NSPBF

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin

MOSTRAR MÁS

Otros transistores... IRF624SPBF, IRF630H, IRF630NLPBF, IRF630NPBF, IRF630NSPBF, IRF630PBF, IRF630SPBF, IRF634NLPBF, AO3401, IRF634PBF, IRF634SPBF, IRF640FP, IRF640H, IRF640LPBF, IRF640NLPBF, IRF640NPBF, IRF640NSPBF