IRF634NSPBF Specs and Replacement
Type Designator: IRF634NSPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 84 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.435 Ohm
Package: TO-263
IRF634NSPBF substitution
- MOSFET ⓘ Cross-Reference Search
IRF634NSPBF datasheet
irf634nlpbf irf634nspbf.pdf
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC... See More ⇒
irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC... See More ⇒
irf634n-s-lpbf.pdf
PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect... See More ⇒
irf634n.pdf
PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin... See More ⇒
Detailed specifications: IRF624SPBF, IRF630H, IRF630NLPBF, IRF630NPBF, IRF630NSPBF, IRF630PBF, IRF630SPBF, IRF634NLPBF, AO3401, IRF634PBF, IRF634SPBF, IRF640FP, IRF640H, IRF640LPBF, IRF640NLPBF, IRF640NPBF, IRF640NSPBF
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