All MOSFET. IRF634NSPBF Datasheet

 

IRF634NSPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF634NSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.435 Ohm
   Package: TO-263

 IRF634NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF634NSPBF Datasheet (PDF)

 ..1. Size:125K  vishay
 irf634nlpbf irf634nspbf.pdf

IRF634NSPBF IRF634NSPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Available Dynamic dV/dt Rating RoHS*RDS(on) ()VGS = 10 V 0.435 175 C Operating Temperature COMPLIANTQg (Max.) (nC) 34 Fast SwitchingQgs (nC) 6.5 Fully Avalanche Rated Ease of ParallelingQgd (nC

 6.1. Size:158K  vishay
 irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf

IRF634NSPBF IRF634NSPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NSVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 250 Dynamic dV/dt Rating AvailableRDS(on) ()VGS = 10 V 0.435 175 C Operating TemperatureRoHS* Fast Switching COMPLIANTQg (Max.) (nC) 34 Fully Avalanche RatedQgs (nC) 6.5 Ease of ParallelingQgd (nC

 7.1. Size:244K  international rectifier
 irf634n-s-lpbf.pdf

IRF634NSPBF IRF634NSPBF

PD - 95342IRF634NPbFIRF634NSPbFl Advanced Process TechnologyIRF634NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDl Fully Avalanche Rated VDSS = 250Vl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.435Gl Lead-FreeDescriptionID = 8.0AFifth Generation HEXFET Power MOSFETs from InternationalSRect

 7.2. Size:301K  international rectifier
 irf634n.pdf

IRF634NSPBF IRF634NSPBF

PD - 94310IRF634NIRF634NSIRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating TemperatureD Fast SwitchingVDSS = 250V Fully Avalanche Rated Ease of ParallelingRDS(on) = 0.435 Simple Drive RequirementsGDescriptionFifth Generation HEXFET Power MOSFETs from InternationalID = 8.0ARectifier utilize advanced processin

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