IRFZ44EL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ44EL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 110 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 48 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 40 nC

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: TO262

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IRFZ44EL Datasheet (PDF)

3.1. irfz44espbf.pdf Size:234K _update

PD - 95572 IRFZ44ESPbF IRFZ44ELPbF HEXFET® Power MOSFET l Advanced Process Technology l Surface Mount (IRFZ44ES) D VDSS = 60V l Low-profile through-hole (IRFZ44EL) l 175°C Operating Temperature RDS(on) = 0.023Ω l Fast Switching G l Fully Avalanche Rated ID = 48A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tec

3.2. irfz44epbf.pdf Size:150K _update

PD - 94822 IRFZ44EPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 0.023Ω Fully Avalanche Rated G Lead-Free ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

3.3. irfz44e.pdf Size:96K _international_rectifier

PD - 91671B IRFZ44E HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175�C Operating Temperature Fast Switching RDS(on) = 0.023? G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb

3.4. irfz44es.pdf Size:163K _international_rectifier

PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET� Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175�C Operating Temperature RDS(on) = 0.023? G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

3.5. irfz44e.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44E， IIRFZ44E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤23mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM R

3.6. irfz44es.pdf Size:205K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44ES ·FEATURES ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =2

Otros transistores... IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFP4229 , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS .

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