IRF7105PBF-1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7105PBF-1

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SO-8

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IRF7105PBF-1 datasheet

 ..1. Size:609K  international rectifier
 irf7105pbf-1.pdf pdf_icon

IRF7105PBF-1

IRF7105TRPbF-1 HEXFET Power MOSFET N-CHANNEL MOSFET 1 8 N-CH P-CH S1 D1 VDS 25 -25 V 2 7 G1 D1 RDS(on) max 3 6 0.1 0.25 S2 D2 (@V = 10V) GS 4 5 G2 D2 Qg (typical) 9.4 10 nC P-CHANNEL MOSFET ID 3.5 -2.3 A SO-8 Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techn

 4.1. Size:302K  international rectifier
 irf7105pbf.pdf pdf_icon

IRF7105PBF-1

PD - 95164 IRF7105PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 l Dual N and P Channel Mosfet 2 7 l Surface Mount G1 D1 VDSS 25V -25V l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 RDS(on) 0.10 0.25 G2 D2 l Fast Switching P-CHANNEL MOSFET l Lead-Free Top View ID 3.5A -2.3A

 7.1. Size:607K  1
 irf7105q.pdf pdf_icon

IRF7105PBF-1

PD - 96102B END OF LIFE IRF7105QPbF HEXFET Power MOSFET N-CHANNEL MOSFET l Advanced Process Technology 1 8 N-Ch P-Ch S1 D1 l Ultra Low On-Resistance 2 7 G1 D1 l Dual N and P Channel MOSFET VDSS 25V -25V l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 5 RDS(on) 0.10 0.25 G2 D2 l 150 C Operating Temperature P-CHANNEL MOSFET l Lead-Free Top View ID 3.5A -2.3A

 7.2. Size:224K  international rectifier
 irf7105.pdf pdf_icon

IRF7105PBF-1

PD - 9.1097C IRF7105 HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel Mosfet G1 D1 VDSS 25V -25V Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) 0.10 0.25 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET Fast Switching Top View ID 3.5A -2.3A Description Fourth Ge

MOSTRAR MÁS

Otros transistores... IRF6802SD, IRF6811SPBF, IRF6892S, IRF6893M, IRF6894MPBF, IRF6898MPBF, IRF7103IPBF, IRF7103PBF-1, 8N60, IRF710PBF, IRF710SPBF, IRF7171M, IRF7201PBF, IRF7202, IRF7204PBF, IRF7205PBF, IRF7205PBF-1