All MOSFET. IRF7105PBF-1 Datasheet

 

IRF7105PBF-1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7105PBF-1
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.4 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SO-8

 IRF7105PBF-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7105PBF-1 Datasheet (PDF)

 ..1. Size:609K  international rectifier
irf7105pbf-1.pdf

IRF7105PBF-1
IRF7105PBF-1

IRF7105TRPbF-1HEXFET Power MOSFETN-CHANNEL MOSFET1 8N-CH P-CH S1 D1VDS 25 -25 V 2 7G1 D1RDS(on) max 3 60.1 0.25 S2 D2(@V = 10V)GS45G2 D2Qg (typical) 9.4 10 nCP-CHANNEL MOSFETID 3.5 -2.3 A SO-8Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techn

 4.1. Size:302K  infineon
irf7105pbf.pdf

IRF7105PBF-1
IRF7105PBF-1

PD - 95164IRF7105PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Dual N and P Channel Mosfet2 7l Surface MountG1 D1VDSS 25V -25Vl Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating45RDS(on) 0.10 0.25G2 D2l Fast SwitchingP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

 7.1. Size:607K  1
irf7105q.pdf

IRF7105PBF-1
IRF7105PBF-1

PD - 96102BEND OF LIFEIRF7105QPbFHEXFET Power MOSFETN-CHANNEL MOSFETl Advanced Process Technology1 8 N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7G1 D1l Dual N and P Channel MOSFETVDSS 25V -25Vl Surface Mount 3 6S2 D2l Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2l 150C Operating TemperatureP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

 7.2. Size:224K  international rectifier
irf7105.pdf

IRF7105PBF-1
IRF7105PBF-1

PD - 9.1097CIRF7105HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET1 8N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MosfetG1 D1VDSS 25V -25V Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2 Dynamic dv/dt RatingP-CHANNEL MOSFET Fast SwitchingTop ViewID 3.5A -2.3ADescriptionFourth Ge

 7.3. Size:1286K  cn vbsemi
irf7105trpbf.pdf

IRF7105PBF-1
IRF7105PBF-1

IRF7105TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: KU2303K | ZVP2106B | IXFT36N50P | ZXM64N035L3

 

 
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