IRFZ44NS Todos los transistores

 

IRFZ44NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ44NS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 110 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 49 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 42 nC

Resistencia drenaje-fuente RDS(on): 0.022 Ohm

Empaquetado / Estuche: D2PAK

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IRFZ44NS Datasheet (PDF)

1.1. irfz44nlpbf irfz44nspbf.pdf Size:334K _update

IRFZ44NS
IRFZ44NS

 IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

1.2. irfz44ns 1.pdf Size:57K _philips

IRFZ44NS
IRFZ44NS

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

 1.3. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44NS
IRFZ44NS

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely

1.4. irfz44ns 1.pdf Size:57K _international_rectifier

IRFZ44NS
IRFZ44NS

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using trench ID Drain current (DC) 49 A technology. The device features ve

Otros transistores... IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRF3205 , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRFZ48NS , IRL1004 .

 

 
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