All MOSFET. IRFZ44NS Datasheet

 

IRFZ44NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ44NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 49 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: D2PAK

IRFZ44NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ44NS Datasheet (PDF)

0.1. irfz44ns 1.pdf Size:57K _philips

IRFZ44NS
IRFZ44NS

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device feat

0.2. irfz44ns 1.pdf Size:57K _international_rectifier

IRFZ44NS
IRFZ44NS

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device feat

 0.3. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44NS
IRFZ44NS

PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175Ω Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve e

0.4. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ44NS
IRFZ44NS

 IRFZ44NSPbF l IRFZ44NLPbF l ® l l D DSS l l l DS(on) Ω Description G ® D

 0.5. irfz44ns.pdf Size:257K _inchange_semiconductor

IRFZ44NS
IRFZ44NS

isc N-Channel MOSFET Transistor IRFZ44NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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