IRF7331PBF-1 Todos los transistores

 

IRF7331PBF-1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7331PBF-1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SO-8

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IRF7331PBF-1 datasheet

 ..1. Size:194K  international rectifier
 irf7331pbf-1.pdf pdf_icon

IRF7331PBF-1

IRF7331TRPbF-1 HEXFET Power MOSFET VDS 20 V 1 8 S1 D1 RDS(on) max 30 2 7 (@V = 4.5V) G1 D1 GS m RDS(on) max 3 6 S2 D2 45 (@V = 2.5V) GS 4 5 G2 D2 Qg (typical) 13 nC ID Top View SO-8 7.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing R

 4.1. Size:214K  international rectifier
 irf7331pbf.pdf pdf_icon

IRF7331PBF-1

PD - 95266A IRF7331PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l Dual N-Channel MOSFET 20V 30@VGS = 4.5V 7.0A l Surface Mount 45@VGS = 2.5V 5.6A l Available in Tape & Reel l Lead-Free Description 1 8 S1 D1 These N-Channel HEXFET power MOSFETs from 2 7 G1 D1 International Rectifier utilize advanced processing techniques to achieve the extremel

 7.1. Size:199K  international rectifier
 irf7331.pdf pdf_icon

IRF7331PBF-1

PD - 94225 IRF7331 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) Dual N-Channel MOSFET 20V 30@VGS = 4.5V 7.0A Surface Mount 45@VGS = 2.5V 5.6A Available in Tape & Reel Description 1 8 S1 D1 These N-Channel HEXFET power MOSFETs from 2 7 G1 D1 International Rectifier utilize advanced processing techniques to achieve the ex

 8.1. Size:169K  international rectifier
 irf7338.pdf pdf_icon

IRF7331PBF-1

PD - 94372A IRF7338 HEXFET Power MOSFET l Ultra Low On-Resistance N-CHANNEL MOSFET N-Ch P-Ch 1 8 S1 D1 l Dual N and P Channel MOSFET 2 7 l Surface Mount G1 D1 VDSS 12V -12V l Available in Tape & Reel 3 6 S2 D2 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.034 0.150 Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing

MOSTRAR MÁS

Otros transistores... IRF7313QPBF , IRF7316PBF-1 , IRF7316QPBF , IRF7321D2PBF , IRF7322D1PBF , IRF7324D1PBF , IRF7324PBF-1 , IRF7326D2PBF , AO3400 , IRF7341G , IRF7341IPBF , IRF7342D2PBF , IRF7342PBF-1 , IRF7342QPBF , IRF7343IPBF , IRF7343QPBF , IRF734PBF .

History: STW45NM50FD | SSP50R240S | STW55NM60ND | AP02N60J-H | 2SK125 | BM3415E | BRI65R380C

 

 

 

 

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