IRF7343IPBF Todos los transistores

 

IRF7343IPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7343IPBF

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: SO-8

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IRF7343IPBF datasheet

 ..1. Size:210K  international rectifier
irf7343ipbf.pdf pdf_icon

IRF7343IPBF

PD - 96088 IRF7343IPbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectif

 7.1. Size:225K  1
auirf7343q.pdf pdf_icon

IRF7343IPBF

PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l Advanced Planar Technology N-Ch P-Ch N-CHANNEL MOSFET 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET V(BR)DSS 55V -55V 2 7 G1 D1 l Surface Mount 3 6 l Available in Tape & Reel S2 D2 RDS(on) typ. 0.043 0.095 l 150 C Operating Temperature 4 5 G2 D2 l Automotive [Q101] Qualif

 7.2. Size:219K  international rectifier
irf7343pbf.pdf pdf_icon

IRF7343IPBF

PD - 92547 IRF7343PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 55V -55V 3 6 S2 D2 l Fully Avalanche Rated 4 5 l Lead-Free G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifi

 7.3. Size:143K  international rectifier
irf7343.pdf pdf_icon

IRF7343IPBF

PD -91709 IRF7343 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced

Otros transistores... IRF7324PBF-1 , IRF7326D2PBF , IRF7331PBF-1 , IRF7341G , IRF7341IPBF , IRF7342D2PBF , IRF7342PBF-1 , IRF7342QPBF , 2N7000 , IRF7343QPBF , IRF734PBF , IRF7351PBF , SD10425 , SD200DC , SD201DC , SD202DC , SD203DC .

History: AP01N60H-HF | BRI65R380C | 4N65KL-TA3-T | AP02N60J-H | JBL101N | IRF7322D1PBF

 

 

 

 

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