SD201DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

High-Speed AnalogN-Channel Enhancement-ModeLLCDMOS FETSSD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203FEATURES DESCRIPTION High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz The SD200 series is manufactured utilizing Calogics Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz proprietary DMOS design and processing techniques

2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage

KSD2012Low Frequency Power Amplifier Complement to KSB1366TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 VIC Collector Current 3 AIB Base Current 0.3 APC Collector

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesS1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDSSD2019 -20V 0.11 -3.4AD1 D1P-Channel MOSFETAbsolute Maxim

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2017 20V 0.05 5.0AN -Channel MOSFETAbsolute Maximum

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times Low Input CapacitanceS1 Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDD1 D1SSD2011 - 60V 0.280 - 2.0AP-Channel MOSFETAbsolute Ma

RSD201N10 Nch 100V 20A Power MOSFET DatasheetlOutlineVDSS100VCPT3(SC-63)RDS(on) (Max.)46mW(3) ID20A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.*1 (1) Gate 2) Fast switching speed.(2) Drain (1) (3) Source 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.*2 BODY DIODE 5) Pb-f

RSD201N10FRA Nch 100V 20A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS100VCPT3(SC-63)RDS(on) (Max.)46mW(3) ID20A(2) (1) PD20WlFeatures lInner circuit(3) 1) Low on-resistance.*1 (1) Gate 2) Fast switching speed.(2) Drain (1) (3) Source 3) Drive circuits can be simple.*2 *1 ESD PROTECTION DIODE 4) Parallel use is easy.

Power Transistors2SD2018Silicon NPN epitaxial planar type darlingtonFor low-frequency amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 60+25 V

2SD2019Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. EmitterID2. Collector3. Base115 k 0.5 k23(Typ) (Typ)12SD2019Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current IC 1.5 A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F 2SD2012 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain3. EMITTER 12 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2015 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Driver for solenoid Relay and motor General purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

CEquivalentcircuitBDarlington 2SD2016(2k) (200)ESilicon NPN Triple Diffused Planar TransistorApplication : Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit0.24.20.210.1c0.52.8 AVCBO 200 V ICBO VCB=200V 10ma

Equivalent CcircuitBDarlington 2SD2015(3k) (500)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Conditions 2SD2015Symbol 2SD2015 Unit Unit0.24.20.210.1c0.52.8ICBO VCB=150V

Equivalent CcircuitBDarlington 2SD2017(4k)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM20(TO220F)Symbol 2SD2017 Symbol Conditions 2SD2017 UnitUnit0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300

Equivalent CcircuitBDarlington 2SD2014(3k) (200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257)Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2014 Symbol Conditions 2SD2014 Unit 4.2Uni

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

WSD2012DN25N-Ch MOSFETGeneral Description Product SummeryThe WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m(max)density , which provide excellent RDSON and gate 20V 11Acharge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management

WSD2018BDN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m(MAX) 12.3Aexcellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req

isc Silicon NPN Darlington Power Transistor 2SD2016DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1A, V = 4VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter, relay and

isc Silicon NPN Darlington Power Transistor 2SD2015DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for drive

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD201DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching application

isc Silicon NPN Darlington Power Transistor 2SD2017DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned of d

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2012DESCRIPTIONHigh DC Current Gain-: h = 100 (Min)@ I = 0.5AFE CLow Saturation Voltage-: V = 1.0V (Max)CE(sat)High Power Dissipation: P = 25 W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier

isc Silicon NPN Darlington Power Transistor 2SD2014DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEComplement to Type 2SB1257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI