SD210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD210
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.05 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 45 Ohm
Paquete / Cubierta: TO-72
Búsqueda de reemplazo de MOSFET SD210
SD210 Datasheet (PDF)
2sd2100.pdf
Ordering number:EN3176APNP/NPN Epitaxial Planar Silicon Transistors2SB1397/2SD2100Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov
ssd2104.pdf
8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2104 - 30V 0.07 - 4.6AP-Channel MOSFETAbsolute Maximu
ssd2101.pdf
8 SOICFEATURES1 8N/C DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesD D D D Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDS SSSD2101 30V 0.03 7.0AN-Channel MOSFETAbsolute Maximum RatingsS
ssd2106.pdf
8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2106 - 20V 0.25 - 2.5AP-Channel MOSFETAbsolute Maximu
ssd2108.pdf
8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2108 - 20V 0.10 - 4.3AP-Channel MOSFETAbsolute Maximu
ssd2102.pdf
8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2102 - 20V 0.06 - 5.3AP-Channel MOSFETAbsolute Maximu
2sd2104.pdf
2SD2104Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SD2104Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 8ACol
2sd2106.pdf
2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6AColle
2sd2108.pdf
2SD2108Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2102.pdf
2SD2102Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)
2sd2107.pdf
2SD2107Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM1. Base2. Collector3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 4ACollector peak current IC(peak) 8ACollector power d
2sd2101.pdf
2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACo
sd2100.pdf
N-Channel Depletion ModeLateral DMOS FETLLCSD2100 / SST2100FEATURES DESCRIPTIONON Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . t 1.0ns The SD2100/SST2100 is a depletion mode DMOS lateral FETrss Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . c 2pf that provides ultra high speed switching with very low Low R . . . . . . .
sd210de sd212de sd214de.pdf
High-Speed AnalogN-Channel DMOS FETsSD210 / SD212 / SD214FEATURES DESCRIPTION High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with Low Feedthrough and Feedba
2sd2101.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Op
2sd2100.pdf
SMD Type TransistorsNPN Transistors2SD21001.70 0.1 Features Low saturation voltageCollector Large current cappacity0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base1.BaseRBE2.Collector3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt
2sd2104.pdf
Iisc Silicon NPN Darlington Power Transistor 2SD2104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo
2sd2105.pdf
isc Silicon NPN Darlington Power Transistor 2SD2105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2106.pdf
isc Silicon NPN Darlington Power Transistor 2SD2106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
2sd2108.pdf
isc Silicon NPN Darlington Power Transistor 2SD2108DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr
2sd2107.pdf
isc Silicon NPN Power Transistor 2SD2107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sd2101.pdf
isc Silicon NPN Darlington Power Transistor 2SD2101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f
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