SD210 Datasheet and Replacement

   Type Designator: SD210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 45 Ohm
   Package: TO-72

SD210 substitution

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SD210 Datasheet (PDF)

..1. Size:88K njs
sd210 sd212 sd214.pdf pdf_icon

0.1. Size:144K sanyo
2sd2100.pdf pdf_icon

Ordering number:EN3176APNP/NPN Epitaxial Planar Silicon Transistors2SB1397/2SD2100Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1397/2SD2100] Large current capacity. Small-sized package making it easy to prov

0.2. Size:353K samsung
ssd2104.pdf pdf_icon

8 SOICFEATURES1 8S DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesS S S Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDD D D DSSD2104 - 30V 0.07 - 4.6AP-Channel MOSFETAbsolute Maximu

0.3. Size:363K samsung
ssd2101.pdf pdf_icon

8 SOICFEATURES1 8N/C DS 2 7 D3 6S D Lower RDS(ON)4 5G D Improved Inductive Ruggedness Top View Fast Swtching TimesD D D D Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityGProduct SummaryPart Number BVdss Rds(on) IDS SSSD2101 30V 0.03 7.0AN-Channel MOSFETAbsolute Maximum RatingsS

0.4. Size:242K samsung
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0.5. Size:361K samsung
ssd2108.pdf pdf_icon

0.6. Size:353K samsung
ssd2102.pdf pdf_icon

0.7. Size:35K hitachi
2sd2104.pdf pdf_icon

2SD2104Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SD2104Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 8ACol

0.8. Size:35K hitachi
2sd2106.pdf pdf_icon

2SD2106Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter13 k 200 23(Typ) (Typ)32SD2106Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC 6AColle

0.9. Size:351K hitachi
2sd2108.pdf pdf_icon

2SD2108Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)

0.10. Size:335K hitachi
2sd2102.pdf pdf_icon

2SD2102Transient Thermal Resistance103TC = 25C1.00.30.11m 10m 100m 1.0 10 100 1000Time t (s)j-cThermal resistance(C/W)

0.11. Size:32K hitachi
2sd2107.pdf pdf_icon

2SD2107Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM1. Base2. Collector3. Emitter123Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 4ACollector peak current IC(peak) 8ACollector power d

0.12. Size:35K hitachi
2sd2101.pdf pdf_icon

2SD2101Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 3 k 150 3(Typ) (Typ)32SD2101Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 7VCollector current IC 10 ACo

0.13. Size:26K calogic
sd2100.pdf pdf_icon

N-Channel Depletion ModeLateral DMOS FETLLCSD2100 / SST2100FEATURES DESCRIPTIONON Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . t 1.0ns The SD2100/SST2100 is a depletion mode DMOS lateral FETrss Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . c 2pf that provides ultra high speed switching with very low Low R . . . . . . .

0.14. Size:29K calogic
sd210de sd212de sd214de.pdf pdf_icon

High-Speed AnalogN-Channel DMOS FETsSD210 / SD212 / SD214FEATURES DESCRIPTION High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with Low Feedthrough and Feedba

0.15. Size:103K jmnic
2sd2101.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2101 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Low frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Op

0.16. Size:1046K kexin
2sd2100.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SD21001.70 0.1 Features Low saturation voltageCollector Large current cappacity0.42 0.1 Complementary to 2SB1397 0.46 0.1 Base1.BaseRBE2.Collector3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitt

0.17. Size:198K inchange semiconductor
2sd2104.pdf pdf_icon

Iisc Silicon NPN Darlington Power Transistor 2SD2104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo

0.18. Size:197K inchange semiconductor
2sd2105.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD2105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

0.19. Size:197K inchange semiconductor
2sd2106.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD2106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

0.20. Size:198K inchange semiconductor
2sd2108.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD2108DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr

0.21. Size:198K inchange semiconductor
2sd2107.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD2107DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

0.22. Size:198K inchange semiconductor
2sd2101.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD2101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 5ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .