SD214DE Todos los transistores

 

SD214DE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SD214DE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.2 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 40 V
   Corriente continua de drenaje |Id|: 0.05 A
   Temperatura máxima de unión (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Resistencia entre drenaje y fuente RDS(on): 45 Ohm
   Paquete / Cubierta: TO-72

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SD214DE Datasheet (PDF)

 ..1. Size:29K  calogic
sd210de sd212de sd214de.pdf

SD214DE
SD214DE

High-Speed AnalogN-Channel DMOS FETsSD210 / SD212 / SD214FEATURES DESCRIPTION High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with Low Feedthrough and Feedba

 9.1. Size:88K  njs
sd210 sd212 sd214.pdf

SD214DE
SD214DE

 9.2. Size:48K  rohm
2sd2142.pdf

SD214DE
SD214DE

2SD2142K / 2SC2062STransistorsTransistors2SD2470(94L-570-D25)(SPEC-D230)316Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for ref

 9.3. Size:87K  rohm
2sd2212 2sd2143 2sd1866.pdf

SD214DE
SD214DE

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

 9.4. Size:53K  rohm
2sd2144s.pdf

SD214DE
SD214DE

2SD2114K / 2SD2144STransistorsHigh-current Gain MediumPower Transistor (20V, 0.5A)2SD2114K / 2SD2144S External dimensions (Units : mm) Features2SD2114K1) High DC current gain.2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.)0.80.10.95 0.952) High emitter-base voltage.(1) (2)00.1 VEBO =12V (Min.)3) Low VCE (sat).(3) VCE (sat) = 0.18V (Typ.)+0.10.15

 9.5. Size:89K  rohm
2sd2114k 2sd2144s.pdf

SD214DE
SD214DE

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

 9.6. Size:77K  rohm
2sd2142k.pdf

SD214DE
SD214DE

2SD2142K Transistors High-gain Amplifier Transistor (30V, 0.3A) 2SD2142K Dimensions (Unit : mm) Features 1) Darlington connection for a high hFE. SMT3(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2.9 1.12) High input impedance. 0.4 0.8(3) Inner circuit (2) (1)C0.95 0.950.151.9(1)Emitter(2)BaseB Each lead has same dimensions(3)Collector

 9.7. Size:157K  rohm
2sd2143.pdf

SD214DE
SD214DE

Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2143 Features Dimensions (Unit : mm) 1) Built-in zener diode between collector and base. 5.5 1.52) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 0.9C0.5Absolute maximum ratings (Ta=25C) Parameter Symbol Limit

 9.8. Size:71K  rohm
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf

SD214DE
SD214DE

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

 9.9. Size:177K  infineon
bsd214sn.pdf

SD214DE
SD214DE

BSD214SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant654 Halogen-free according to IEC61249-2-21123Type

 9.10. Size:329K  secos
2sd2142.pdf

SD214DE
SD214DE

2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Darlington connection for a high hFE. AL High input impedance. 33Top View C BMARKING 11 22K ER1M DH JF GPACKAGE INFORMATION Package MPQ LeaderSize Millimeter Millimeter REF. R

 9.11. Size:23K  sanken-ele
2sd2141.pdf

SD214DE

Equivalent circuitCBuilt-in Avalanche Diode Bfor Surge AbsorbingDarlington 2SD2141(1.5k)(100)ESilicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2141 Symbol Conditions 2SD2141 UnitUn

 9.12. Size:424K  htsemi
2sd2142.pdf

SD214DE

2S 2142 DTRANSISOR (NPN)SOT23 FEATURES Darlington Connection for a High hFE High Input Impedance MARKING: R1M 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V V Emitter-Base Voltage 12 V EBOI Collector Current 300 mA C

 9.13. Size:910K  kexin
2sd2142.pdf

SD214DE
SD214DE

SMD Type TransistorsNPN Transistors2SD2142SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=32V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Colle

 9.14. Size:193K  inchange semiconductor
2sd214.pdf

SD214DE
SD214DE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD214DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli

 9.15. Size:185K  inchange semiconductor
2sd2141.pdf

SD214DE
SD214DE

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2141DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ I = 3AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in ignitor

 9.16. Size:190K  inchange semiconductor
2sd2148.pdf

SD214DE
SD214DE

isc Product Specificationisc Silicon NPN Power Transistor 2SD2148DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 9.17. Size:202K  inchange semiconductor
2sd2140.pdf

SD214DE
SD214DE

isc Silicon NPN Power Transistor 2SD2140DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1421Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.Optimum for the output stage of a HiFi audio amplifierABSOLUTE MAXI

 9.18. Size:216K  inchange semiconductor
2sd2143.pdf

SD214DE
SD214DE

isc Silicon NPN Power Transistors 2SD2143DESCRIPTIONDC Current Gain -h :1000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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